PHP45N03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03LT, PHB45N03LT, PHD45N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Very low on-state resistance Fast switching ID = 45 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance

PHP45N03LT; PHB45N03LT;PHD45N03LTN-channel TrenchMOS transistorRev. 06 05 October 2000 Product specification1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LT in SOT78 (TO-220AB)PHB45N03LT in SOT404 (D2-PAK)PHD45N03LT in SOT428 (D-PAK).2. Features Low on-state resistance

PHP/PHB/PHD45N03LTAN-channel enhancement mode field-effect transistorRev. 02 02 November 2001 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP45N03LTA in SOT78 (TO-220AB)PHB45N03LTA in SOT404 (D2-PAK)PHD45N03LTA in SOT428 (D-PAK).2. Features Low on-state resistance

Philips Semiconductors Product specification TrenchMOS transistor PHP45N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 45 Afeatures very low on-state r