2SJ165 Todos los transistores

 ..1. Size:384K  nec
 2sj165.pdf

 9.1. Size:294K  toshiba
 2sj167.pdf

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs Low on resistance R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1

 9.2. Size:330K  toshiba
 2sj168.pdf

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit mm Analog Switch Applications Interface Applications Excellent switching time ton = 14 ns (typ.) High forward transfer admittance Y = 100 mS (min) fs @I = -50 mA D Low on resistance R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-

 9.3. Size:83K  renesas
 rej03g0847 2sj160 2sj161 2sj162.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:350K  nec
 2sj166.pdf

 9.5. Size:27K  panasonic
 2sj164.pdf

Silicon Junction FETs (Small Signal) 2SJ164 2SJ164 Silicon P-Channel Junction Unit mm For switching 4.0 0.2 Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1.27 1.27 1 Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 Gate Drain current ID 20 mA 3

 9.6. Size:29K  panasonic
 2sj163.pdf

Silicon Junction FETs (Small Signal) 2SJ163 2SJ163 Silicon P-Channel Junction Unit mm For general use switching +0.2 2.8 0.3 Complementary with 2SK1103 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2

 9.7. Size:119K  hitachi
 2sj169 2sj170.pdf

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 9.8. Size:38K  hitachi
 2sj160 2sj161 2sj162.pdf

2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET ADE-208-1182 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diode

 9.9. Size:1317K  kexin
 2sj166-3.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.2 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

 9.10. Size:1307K  kexin
 2sj166.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ166 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V) +0.1 1.9-0.1 Comp;ementary to 2SK1132 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage