IRFS9632 Todos los transistores

 

IRFS9632 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS9632
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET IRFS9632

 

IRFS9632 Datasheet (PDF)

 8.1. Size:286K  1
irfs9640 irfs9641.pdf

IRFS9632
IRFS9632

 9.1. Size:290K  1
irfs9530 irfs9531.pdf

IRFS9632
IRFS9632

 9.2. Size:282K  1
irfs9240 irfs9241.pdf

IRFS9632
IRFS9632

 9.3. Size:296K  1
irfs9540 irfs9541.pdf

IRFS9632
IRFS9632

 9.4. Size:288K  1
irfs9140 irfs9141.pdf

IRFS9632
IRFS9632

 9.5. Size:232K  international rectifier
irfs9n60apbf.pdf

IRFS9632
IRFS9632

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.6. Size:270K  international rectifier
irfs9n60a.pdf

IRFS9632
IRFS9632

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.7. Size:26K  samsung
irfs8xx irfs9xxx sss4n60 sss6n60.pdf

IRFS9632

 9.8. Size:13K  samsung
irfs91xx irfs92xx.pdf

IRFS9632

 9.9. Size:225K  vishay
irfs9n60a sihfs9n60a.pdf

IRFS9632
IRFS9632

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

 9.10. Size:278K  inchange semiconductor
irfs9n60a.pdf

IRFS9632
IRFS9632

iscN-Channel MOSFET Transistor IRFS9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... IRFS9542 , IRFS9543 , IRFS9620 , IRFS9621 , IRFS9622 , IRFS9623 , IRFS9630 , IRFS9631 , AON7408 , IRFS9633 , IRFS9640 , IRFS9641 , IRFS9642 , IRFS9643 , IRFS9N60A , IRFSL11N50A , IRFSL9N60A .

 

 
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