2SJ166 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V)+0.11.9-0.1 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage

SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V)1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 50 (VGS =-4V)+0.11.9-0.2 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = -50 mA D Low on resistance: R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-

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Silicon Junction FETs (Small Signal) 2SJ1642SJ164Silicon P-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3 :

Silicon Junction FETs (Small Signal) 2SJ1632SJ163Silicon P-Channel JunctionUnit : mmFor general use switching+0.22.8 0.3Complementary with 2SK1103 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low ON-resistance Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2

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2SJ160, 2SJ161, 2SJ162Silicon P-Channel MOS FETADE-208-1182 (Z)1st. EditionMar. 2001ApplicationLow frequency power amplifierComplementary pair with 2SK1056, 2SK1057 and 2SK1058Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diode