IRFS9641 Todos los transistores

 

IRFS9641 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS9641
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 112(max) nC
   Tiempo de subida (tr): 15(max) nS
   Conductancia de drenaje-sustrato (Cd): 230 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET IRFS9641

 

IRFS9641 Datasheet (PDF)

 ..1. Size:286K  1
irfs9640 irfs9641.pdf

IRFS9641
IRFS9641

 9.1. Size:290K  1
irfs9530 irfs9531.pdf

IRFS9641
IRFS9641

 9.2. Size:282K  1
irfs9240 irfs9241.pdf

IRFS9641
IRFS9641

 9.3. Size:296K  1
irfs9540 irfs9541.pdf

IRFS9641
IRFS9641

 9.4. Size:288K  1
irfs9140 irfs9141.pdf

IRFS9641
IRFS9641

 9.5. Size:232K  international rectifier
irfs9n60apbf.pdf

IRFS9641
IRFS9641

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.6. Size:270K  international rectifier
irfs9n60a.pdf

IRFS9641
IRFS9641

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 9.7. Size:26K  samsung
irfs8xx irfs9xxx sss4n60 sss6n60.pdf

IRFS9641

 9.8. Size:13K  samsung
irfs91xx irfs92xx.pdf

IRFS9641

 9.9. Size:225K  vishay
irfs9n60a sihfs9n60a.pdf

IRFS9641
IRFS9641

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

 9.10. Size:278K  inchange semiconductor
irfs9n60a.pdf

IRFS9641
IRFS9641

iscN-Channel MOSFET Transistor IRFS9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

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