IRFSL11N50A Todos los transistores

 ..1. Size:107K  international rectifier
 irfsl11n50a.pdf

PD- 91847A IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance

 ..2. Size:827K  international rectifier
 irfsl11n50apbf.pdf

PD- 95231 IRFSL11N50APbF Lead-Free 04/29/04 Document Number 91288 www.vishay.com 1 IRFSL11N50APbF Document Number 91288 www.vishay.com 2 IRFSL11N50APbF Document Number 91288 www.vishay.com 3 IRFSL11N50APbF Document Number 91288 www.vishay.com 4 IRFSL11N50APbF Document Number 91288 www.vishay.com 5 IRFSL11N50APbF Document Number 91288 www.vishay.com 6 IRFSL11

 ..3. Size:305K  vishay
 irfsl11n50a sihfsl11n50a.pdf

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

 ..4. Size:307K  vishay
 irfsl11n50apbf sihfsl11n50a.pdf

IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 Fast Switching Qg (Max.) (nC) 51 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 23 Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D I2PAK

 4.1. Size:111K  international rectifier
 irfsl11n50.pdf

PD- 91847B IRFSL11N50A HEXFET Power MOSFET Dynamic dv/dt Rating D Repetitive Avalanche Rated VDSS = 500V Fast Switching Ease of Paraleling RDS(on) = 0.55 Simple Drive Requirements G ID = 11A S Description Third Generation HEXFET Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low

 8.1. Size:278K  international rectifier
 irfb17n20dpbf irfsl17n20dpbf.pdf

PD- 95325 IRFB17N20DPbF IRFS17N20DPbF SMPS MOSFET IRFSL17N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17 16A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch

 8.2. Size:140K  international rectifier
 irfb17n20d irfs17n20d irfsl17n20d.pdf

PD- 93902A IRFB17N20D IRFS17N20D SMPS MOSFET IRFSL17N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T