SFF75N06M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFF75N06M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 80 nC
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 700 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO-254
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SFF75N06M Datasheet (PDF)
sff75n06m sff75n06z.pdf
SFF75N06MSFF75N06ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP60 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energyPOWER MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft r
sff75n06-28.pdf
PRELIMINARYSFF75N06-28SOLID STATE DEVICES, INC.14005 Stage Road * Santa Fe Springs, Ca 90670Phone: (562) 404-4474 * Fax: (562) 404-177330 AMP 1/60 VOLTSDESIGNER'S DATA SHEET25m N-CHANNELPOWER MOSFETFEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance28 PIN CLCC Excellent high temperature stability Very fast switc
sff75n08m sff75n08z.pdf
SFF75N08M Solid State Devices, Inc. SFF75N08Z 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNERS DATA SHEET 55 AMP (note 1) /75 Volts TO-254 and TO-254Z 8.5 mO N-Channel Trench Gate MOSFET Note 1: maximum current limited by package configuration Features: Trench gate techn
sff75n05m sff75n05z.pdf
SFF75N05MSFF75N05ZSOLID STATE DEVICES, INC.14830 Valley View Blvd * La Mirada, Ca 90638Phone: (562) 404-7855 * Fax: (562) 404-177375 AMP50 VOLTSDESIGNER'S DATA SHEET15mFEATURES:N-CHANNEL Advanced high-cell density withstands high energy MOSFET Very low conduction and switching losses Fast recovery drain-to-source diode with soft recove
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