SFF9230Z Todos los transistores

 

SFF9230Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFF9230Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-254Z

 Búsqueda de reemplazo de MOSFET SFF9230Z

 

SFF9230Z Datasheet (PDF)

 ..1. Size:162K  ssdi
sff9230m sff9230z.pdf

SFF9230Z
SFF9230Z

 9.1. Size:545K  fairchild semi
sff9250l.pdf

SFF9230Z
SFF9230Z

Advanced Power MOSFETSFF9250LFEATURESBVDSS = -200 V Logic-Level Gate DriveRDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -12.6 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 10uA (Max.) @ VDS=-200V Lower RDS(ON) : 0.175 (Typ.)1231.Gate 2.

 9.2. Size:906K  samsung
sff9244.pdf

SFF9230Z
SFF9230Z

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.3. Size:903K  samsung
sff9240.pdf

SFF9230Z
SFF9230Z

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.4. Size:152K  ssdi
sff9240c.pdf

SFF9230Z
SFF9230Z

 9.5. Size:156K  ssdi
sff9240j.pdf

SFF9230Z
SFF9230Z

 9.6. Size:156K  ssdi
sff9240-28.pdf

SFF9230Z
SFF9230Z

 9.7. Size:169K  ssdi
sff9240m sff9240z.pdf

SFF9230Z
SFF9230Z

 9.8. Size:35K  sensitron
sff924028.pdf

SFF9230Z
SFF9230Z

SENSITRON SHD226409 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 582, REV. - HERMETIC POWER MOSFET P-CHANNEL FEATURES: -100 Volt, 0.21 Ohm, -13A MOSFET Isolated Hermetic Metal Package Fast Switching Equivalent to IRFY9140 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLT

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


SFF9230Z
  SFF9230Z
  SFF9230Z
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top