SQM110N06-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQM110N06-06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 96.5 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 708 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SQM110N06-06

SQM110N06-06 Datasheet (PDF)

..1. Size:169K vishay
sqm110n06-06.pdf

SQM110N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddTO-263 D 100 % Rg and UIS Tested

3.1. Size:104K vishay
sqm110n06-04l.pdf

SQM110N06-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0050 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

6.1. Size:168K vishay
sqm110n04-03.pdf

SQM110N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0028 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 qualifieddConfiguration Single 100 % Rg and UIS Tested Compl

6.2. Size:167K vishay
sqm110n08-05.pdf

SQM110N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 75 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0048 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedDTO-263

6.3. Size:168K vishay
sqm110n04-04.pdf

SQM110N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0035 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedD Co

6.4. Size:168K vishay
sqm110n04-03l.pdf

SQM110N04-03Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0053 Package with Low Thermal ResistanceID (A) 120 AEC-Q101 QualifieddConfiguration Single

6.5. Size:168K vishay
sqm110n04-02l.pdf

SQM110N04-02Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 40 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.0023 Package with Low Thermal ResistanceRDS(on) () at VGS = 4.5 V 0.0041 AEC-Q101 QualifieddID (A) 120 100 % Rg and UIS T

6.6. Size:165K vishay
sqm110n04.pdf

SQM110N04-04Vishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD Compliant to RoHS Directive 2002/95/ECTO-263

6.7. Size:710K vishay
sqm110n05-06l.pdf

SQM110N05-06Lwww.vishay.comVishay SiliconixAutomotive N-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 55DefinitionRDS(on) () at VGS = 10 V 0.006 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.010 Package with Low Thermal ResistanceID (A) 110 AEC-Q101 QualifiedcConfiguration Single

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BUK7M42-60E

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