SQM110P04-04L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQM110P04-04L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 1614 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-263

 Búsqueda de reemplazo de SQM110P04-04L MOSFET

- Selecciónⓘ de transistores por parámetros

 

SQM110P04-04L datasheet

 ..1. Size:168K  vishay
sqm110p04-04l.pdf pdf_icon

SQM110P04-04L

SQM110P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0040 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0060 Package with Low Thermal Resistance ID (A) - 120 AEC-Q101 Qualifiedd Configuration

 6.1. Size:167K  vishay
sqm110p06-8m9l.pdf pdf_icon

SQM110P04-04L

SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0089 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0132 AEC-Q101 Qualifiedd ID (A) - 110 Material categorization Configuratio

 6.2. Size:168K  vishay
sqm110p06-07l.pdf pdf_icon

SQM110P04-04L

SQM110P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0067 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0088 AEC-Q101 Qualifiedd ID (A) - 120 Material categorization For definitio

 8.1. Size:104K  vishay
sqm110n06-04l.pdf pdf_icon

SQM110P04-04L

SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 60 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0035 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 4.5 V 0.0050 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS T

Otros transistores... SQM110N04-03, SQM110N04-03L, SQM110N04-04, SQM110N05-06L, SQM110N06-04L, SQM110N06-06, SQM110N08-05, SQM110N10-09, IRFB4110, SQM110P06-07L, SQM110P06-8M9L, SQM120N02-1M3L, SQM120N03-1M5L, SQM120N04-02L, SQM120N04-03, SQM120N04-03L, SQM120N04-04