SQM120N04-1M9 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQM120N04-1M9  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 1180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: TO-263

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SQM120N04-1M9 datasheet

 ..1. Size:155K  vishay
 sqm120n04-1m9.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0019 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single For definitions of compliance please

 2.1. Size:102K  vishay
 sqm120n04-1m7l.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m7L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0020 AEC-Q101 Qualifiedd ID (A) 120 Material categorization Configuration Sin

 2.2. Size:166K  vishay
 sqm120n04-1m8.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0018 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested Compliant to RoHS

 2.3. Size:168K  vishay
 sqm120n04-1m7.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0017 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single For definitions of compliance please

MOSTRAR MÁS

Otros transistores... SQM120N03-1M5L, SQM120N04-02L, SQM120N04-03, SQM120N04-03L, SQM120N04-04, SQM120N04-1M7, SQM120N04-1M7L, SQM120N04-1M8, 7N65, SQM120N04-2M1, SQM120N06-04L, SQM120N06-06, SQM120N06-3M5L, SQM120N08-05, SQM120N10-09, SQM120N10-3M8, SQM120P04-04L