SQM120N04-1M9 Todos los transistores

 

SQM120N04-1M9 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SQM120N04-1M9
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 1180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de SQM120N04-1M9 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SQM120N04-1M9 Datasheet (PDF)

 ..1. Size:155K  vishay
sqm120n04-1m9.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m9www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0019 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

 2.1. Size:102K  vishay
sqm120n04-1m7l.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m7Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0020 AEC-Q101 QualifieddID (A) 120 Material categorization:Configuration Sin

 2.2. Size:166K  vishay
sqm120n04-1m8.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m8Vishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0018 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Compliant to RoHS

 2.3. Size:168K  vishay
sqm120n04-1m7.pdf pdf_icon

SQM120N04-1M9

SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please

Otros transistores... SQM120N03-1M5L , SQM120N04-02L , SQM120N04-03 , SQM120N04-03L , SQM120N04-04 , SQM120N04-1M7 , SQM120N04-1M7L , SQM120N04-1M8 , STP75NF75 , SQM120N04-2M1 , SQM120N06-04L , SQM120N06-06 , SQM120N06-3M5L , SQM120N08-05 , SQM120N10-09 , SQM120N10-3M8 , SQM120P04-04L .

History: PMN27XPEA

 

 
Back to Top

 


 
.