SQM120N06-04L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQM120N06-04L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 375 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 184 nC
Tiempo de subida (tr): 23 nS
Conductancia de drenaje-sustrato (Cd): 935 pF
Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de MOSFET SQM120N06-04L
SQM120N06-04L Datasheet (PDF)
sqm120n06-04l.pdf
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sqm120n06-06.pdf
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sqm120n06-3m5l.pdf
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sqm120n04-04.pdf
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sqm120n08-05.pdf
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sqm120n03-1m5l.pdf
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sqm120n04-02l.pdf
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sqm120n04-1m9.pdf
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sqm120n04-1m7l.pdf
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sqm120n04-2m1.pdf
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sqm120n04-03l.pdf
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sqm120n04-1m8.pdf
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sqm120n04-03.pdf
SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co
sqm120n04-1m7.pdf
SQM120N04-1m7www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY Package with Low Thermal ResistanceVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0017 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration SingleFor definitions of compliance please
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