SQM120N06-06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQM120N06-06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 96.5 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 708 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SQM120N06-06

SQM120N06-06 Datasheet (PDF)

..1. Size:184K vishay
sqm120n06-06.pdf

SQM120N06-06www.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.006 AEC-Q101 qualified dID (A) 120 100 % Rg and UIS testedConfiguration SinglePackage TO-263 Material categorization: for definitions of co

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sqm120n06-04l.pdf

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sqm120n06-3m5l.pdf

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sqm120n04-04.pdf

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sqm120n02-1m3l.pdf

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sqm120n03-1m5l.pdf

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sqm120n04-02l.pdf

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sqm120n04-1m7l.pdf

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sqm120n04-1m7.pdf

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