SQM120N10-09 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQM120N10-09 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 24 nS
Cossⓘ - Capacitancia de salida: 635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Encapsulados: TO-263
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SQM120N10-09 datasheet
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sqm120n10-09.pdf 
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sqm120n04-2m1.pdf
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sqm120n04-03l.pdf
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sqm120n04-1m8.pdf
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sqm120n06-04l.pdf
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sqm120n04-03.pdf
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sqm120n04-1m7.pdf
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