SQM120N10-3M8 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQM120N10-3M8 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 110 nS
Cossⓘ - Capacitancia de salida: 3070 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Encapsulados: TO-263
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SQM120N10-3M8 datasheet
..1. Size:161K vishay
sqm120n10-3m8.pdf 
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sqm120n10-09.pdf
SQM120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( ) at VGS = 10 V 0.0095 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested
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sqm120n04-04.pdf
SQM120N04-04 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested Co
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sqm120n02-1m3l.pdf
SQM120N02-1m3L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 10 V 0.0013 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0017 Package with Low Thermal Resistance ID (A) 120 100 % Rg and UIS Tested Configuration Sin
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sqm120n08-05.pdf
SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 75 Definition RDS(on) ( ) at VGS = 10 V 0.0048 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested TO-263
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sqm120n06-3m5l.pdf
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7.5. Size:168K vishay
sqm120n03-1m5l.pdf
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sqm120n04-02l.pdf
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sqm120n04-1m9.pdf
SQM120N04-1m9 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY Package with Low Thermal Resistance VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0019 100 % Rg and UIS Tested ID (A) 120 Material categorization Configuration Single For definitions of compliance please
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sqm120n06-06.pdf
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sqm120n04-1m7l.pdf
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sqm120n04-2m1.pdf
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7.11. Size:715K vishay
sqm120n04-03l.pdf
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7.12. Size:166K vishay
sqm120n04-1m8.pdf
SQM120N04-1m8 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0018 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D 100 % Rg and UIS Tested Compliant to RoHS
7.13. Size:750K vishay
sqm120n06-04l.pdf
SQM120N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0050 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single
7.14. Size:767K vishay
sqm120n04-03.pdf
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7.15. Size:168K vishay
sqm120n04-1m7.pdf
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Otros transistores... SQM120N04-1M8, SQM120N04-1M9, SQM120N04-2M1, SQM120N06-04L, SQM120N06-06, SQM120N06-3M5L, SQM120N08-05, SQM120N10-09, 2N7002, SQM120P04-04L, SQM120P06-07L, SQM18N33-160H, SQM200N04-1M1L, SQM200N04-1M7L, SQM200N04-1M8, SQM25N15-52, SQM35N30-97
