SQM120P04-04L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQM120P04-04L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 1614 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO-263
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SQM120P04-04L datasheet
..1. Size:746K vishay
sqm120p04-04l.pdf 
SQM120P04-04L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0040 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0060 Package with Low Thermal Resistance ID (A) - 120 AEC-Q101 Qualifiedd Configuration
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sqm120p06-07l.pdf
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sqm120n04-1m9.pdf
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sqm120n04-03l.pdf
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sqm120n04-1m8.pdf
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sqm120n06-04l.pdf
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sqm120n04-03.pdf
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Otros transistores... SQM120N04-1M9, SQM120N04-2M1, SQM120N06-04L, SQM120N06-06, SQM120N06-3M5L, SQM120N08-05, SQM120N10-09, SQM120N10-3M8, IRF9540N, SQM120P06-07L, SQM18N33-160H, SQM200N04-1M1L, SQM200N04-1M7L, SQM200N04-1M8, SQM25N15-52, SQM35N30-97, SQM40N10-30
