SQM50N04-5M0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQM50N04-5M0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 512 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de SQM50N04-5M0 MOSFET
SQM50N04-5M0 datasheet
sqm50n04-5m0.pdf
SQM50N04-5m0 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.005 100 % Rg and UIS Tested ID (A) 50 AEC-Q101 Qualifiedd Configuration Single Material categorization For definitions of TO-263 compliance p
sqm50n04-4m0l.pdf
SQM50N04-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0040 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0055 AEC-Q101 Qualifiedd ID (A) 50 Material categorization Configuration Singl
sqm50n04-4m1.pdf
SQM50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0041 AEC-Q101 Qualifiedd ID (A) 50 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance please s
sqm50p08-25l.pdf
SQM50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 80 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.031 AEC-Q101 Qualifiedd ID (A) - 50 Material categorization Configuration
Otros transistores... SQM35N30-97 , SQM40N10-30 , SQM40N15-38 , SQM40P10-40L , SQM47N10-24L , SQM50020EL , SQM50N04-4M0L , SQM50N04-4M1 , IRFB3607 , SQM50P03-07 , SQM50P04-09L , SQM50P06-15L , SQM50P08-25L , SQM60N06-15 , SQM60N20-35 , SQM85N03-06P , SQM85N10-10 .
Liste
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