SSF2439E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF2439E
   Código: 2439E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT-23-6

Búsqueda de reemplazo de MOSFET SSF2439E

SSF2439E Datasheet (PDF)

..1. Size:274K goodark
ssf2439e.pdf

SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-4.5A Schematic Diagram RDS(ON)

8.1. Size:511K silikron
ssf2437e.pdf

SSF2437E Main Product Characteristics: VDSS -20V RDS(on) 38m (typ.) ID -5.5A Marking and pin SOT-23-6 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

9.1. Size:294K silikron
ssf2418eb.pdf

SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

9.2. Size:382K silikron
ssf2418e.pdf

SSF2418E Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

9.3. Size:191K silikron
ssf2449.pdf

SSF2449DDESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

9.4. Size:346K silikron
ssf2485.pdf

SSF2485D1 D2DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2with gate voltages as low as 2.5V. S1 S2Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

9.5. Size:344K silikron
ssf2429.pdf

SSF2429DESCRIPTION The SSF2429 uses advanced trench technology to Dprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GGENERAL FEATURES S VDS = -20V,ID =-5A Schematic diagram RDS(ON)

9.6. Size:511K goodark
ssf2418b.pdf

SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

9.7. Size:508K goodark
ssf2418ebk.pdf

SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

9.8. Size:835K cn vbsemi
ssf2418e.pdf

SSF2418Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23

Otros transistores... SQP90P06-07L , SQR40N10-25 , SQR50N03-06P , SQR50N04-3M8 , SQR50N06-07L , SSF22A5E , SSF2418B , SSF2418EBK , IRF9640 , SSF2641S , SSF2816EBK , SSF2N60D1 , SSF3612E , R9523 , SSF440M , SSF450M , SSF5508D .

History: TSJ10N06AT

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