SSF2439E Todos los transistores

 

SSF2439E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2439E

Código: 2439E

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.2 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.2 V

Carga de compuerta (Qg): 10 nC

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 0.055 Ohm

Empaquetado / Estuche: SOT-23-6

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SSF2439E Datasheet (PDF)

1.1. ssf2439e.pdf Size:274K _upd-mosfet

SSF2439E
SSF2439E

 SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4.5A Schematic Diagram RDS(ON) < 180mΩ @ VGS=-2V RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V ESD Rating:2000V HBM ● High Power and cu

4.1. ssf2437e.pdf Size:511K _silikron

SSF2439E
SSF2439E

 SSF2437E Main Product Characteristics: VDSS -20V RDS(on) 38mΩ (typ.) ID -5.5A ① Marking and pin SOT-23-6 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

 5.1. ssf2418b.pdf Size:511K _upd-mosfet

SSF2439E
SSF2439E

SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V R

5.2. ssf2418ebk.pdf Size:508K _upd-mosfet

SSF2439E
SSF2439E

SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

 5.3. ssf2449.pdf Size:191K _silikron

SSF2439E
SSF2439E

SSF2449 D DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 60mΩ @ VGS=-4.5V ● High Power an

5.4. ssf2485.pdf Size:346K _silikron

SSF2439E
SSF2439E

SSF2485 D1 D2 DESCRIPTION The SSF2485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2 with gate voltages as low as 2.5V. S1 S2 Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquir

 5.5. ssf2418e.pdf Size:382K _silikron

SSF2439E
SSF2439E

 SSF2418E Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body re

5.6. ssf2418eb.pdf Size:294K _silikron

SSF2439E
SSF2439E

SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4.0V

5.7. ssf2429.pdf Size:344K _silikron

SSF2439E
SSF2439E

SSF2429 DESCRIPTION The SSF2429 uses advanced trench technology to D provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surf

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