SSF2816EBK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2816EBK  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TSSOP-8

 Búsqueda de reemplazo de SSF2816EBK MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSF2816EBK datasheet

 ..1. Size:458K  goodark
 ssf2816ebk.pdf pdf_icon

SSF2816EBK

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)

 5.1. Size:298K  silikron
 ssf2816eb.pdf pdf_icon

SSF2816EBK

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 6.1. Size:425K  silikron
 ssf2816e.pdf pdf_icon

SSF2816EBK

SSF2816E Main Product Characteristics VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.1. Size:533K  silikron
 ssf2814eh2.pdf pdf_icon

SSF2816EBK

SSF2814EH2 Main Product Characteristics VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description

MOSTRAR MÁS

Otros transistores... SQR50N03-06P, SQR50N04-3M8, SQR50N06-07L, SSF22A5E, SSF2418B, SSF2418EBK, SSF2439E, SSF2641S, 8N60, SSF2N60D1, SSF3612E, R9523, SSF440M, SSF450M, SSF5508D, SSF5510G, SSF6010G