SSF5508D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF5508D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18.82 nS
Cossⓘ - Capacitancia de salida: 463 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO-252
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SSF5508D Datasheet (PDF)
ssf5508d.pdf
SSF5508D Preliminary Main Product Characteristics VDSS 60VTyp RDS(on) 3.8mohm TypID 110A Features and Benefits SSF5508D Top View (DPAK) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 150 operating temperature High Avalanche capability and 100% tested Lead free
ssf5508.pdf
SSF5508 Feathers: ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m(typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF5508 is a new generation of middle voltage and high current NChannel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec
ssf5508u.pdf
SSF5508UMain Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.)ID 110AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf5508a.pdf
SSF5508A Main Product Characteristics: VDSS 55V RDS(on) 4.5mohmTypID 110A Features and Benefits: SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the lat
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918