SSF5508D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF5508D 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18.82 nS
Cossⓘ - Capacitancia de salida: 463 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Encapsulados: TO-252
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SSF5508D datasheet
ssf5508d.pdf
SSF5508D Preliminary Main Product Characteristics VDSS 60V Typ RDS(on) 3.8mohm Typ ID 110A Features and Benefits SSF5508D Top View (DPAK) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 150 operating temperature High Avalanche capability and 100% tested Lead free
ssf5508.pdf
SSF5508 Feathers ID =110A Advanced trench process technology BV=55V Ultra low Rdson, typical 6mohm Rdson=4.5 m (typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF5508 is a new generation of middle voltage and high current N Channel enhancement mode trench power SSF5508 TOP View (TO220) MOSFET. This new tec
ssf5508u.pdf
SSF5508U Main Product Characteristics VDSS 55V RDS(on) 4.5mohm(typ.) ID 110A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf5508a.pdf
SSF5508A Main Product Characteristics VDSS 55V RDS(on) 4.5mohm Typ ID 110A Features and Benefits SSF5508A TOP View (TO263) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the lat
Otros transistores... SSF2439E, SSF2641S, SSF2816EBK, SSF2N60D1, SSF3612E, R9523, SSF440M, SSF450M, IRF1405, SSF5510G, SSF6010G, SSF7008, TJ100F04M3L, TJ100F06M3L, TJ150F04M3L, TJ15S10M3, TJ200F04M3L
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