TK100A10N1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK100A10N1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 140 nC
Tiempo de subida (tr): 32 nS
Conductancia de drenaje-sustrato (Cd): 1500 pF
Resistencia entre drenaje y fuente RDS(on): 0.0038 Ohm
Paquete / Cubierta: TO-220SIS
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TK100A10N1 Datasheet (PDF)
tk100a10n1.pdf
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TK100A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A10N1TK100A10N1TK100A10N1TK100A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
tk100a10n1.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK100A10N1ITK100A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 3.8m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MA
tk100a06n1.pdf
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TK100A06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A06N1TK100A06N1TK100A06N1TK100A06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
tk100a08n1.pdf
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TK100A08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100A08N1TK100A08N1TK100A08N1TK100A08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
tk100a06n1.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100A06N1ITK100A06N1FEATURESLow drain-source on-resistance:RDS(ON) = 2.7m (typ.) (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLU
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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