TK100S04N1L Datasheet. Equivalente

 ..1. Size:237K  toshiba
 tk100s04n1l.pdf

TK100S04N1L MOSFETs Silicon N-channel MOS (U-MOS -H) TK100S04N1L TK100S04N1L TK100S04N1L TK100S04N1L 1. Applications 1. Applications 1. Applications 1. Applications Automotive Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current

 9.1. Size:217K  toshiba
 tk100f06k3.pdf

TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 4.0m (typ.) 10.0 0.3 High forward transfer admittance Yfs = 174 S (typ.) 0.4 0.1 9.5 0.2 Low leakage current IDSS = 10 A (max) (VDS

 9.2. Size:246K  toshiba
 tk100l60w.pdf

TK100L60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK100L60W TK100L60W TK100L60W TK100L60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.015 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching

 9.3. Size:247K  toshiba
 tk100e08n1.pdf

TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E08N1 TK100E08N1 TK100E08N1 TK100E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3)

 9.4. Size:280K  toshiba
 tk100f04k3l.pdf

TK100F04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK100F04K3L TK100F04K3L TK100F04K3L TK100F04K3L 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.5 m (typ.) (VGS = 10 V) (2) Low leakage cur

 9.5. Size:230K  toshiba
 tk100a06n1.pdf

TK100A06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A06N1 TK100A06N1 TK100A06N1 TK100A06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.2 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3)

 9.6. Size:211K  toshiba
 tk100f04k3.pdf

TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.5 m (typ.) 10.0 0.3 0.4 0.1 High forward transfer admittance Yfs = 174 S (typ.) 9.5 0.2 Low leakage current IDSS = 10 A (max) (VDS

 9.7. Size:231K  toshiba
 tk100a08n1.pdf

TK100A08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A08N1 TK100A08N1 TK100A08N1 TK100A08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3)

 9.8. Size:234K  toshiba
 tk100a10n1.pdf

TK100A10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100A10N1 TK100A10N1 TK100A10N1 TK100A10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.1 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3)

 9.9. Size:244K  toshiba
 tk100e06n1.pdf

TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E06N1 TK100E06N1 TK100E06N1 TK100E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3)

 9.10. Size:247K  toshiba
 tk100e10n1.pdf

TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E10N1 TK100E10N1 TK100E10N1 TK100E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3)

 9.11. Size:274K  ixys
 ixtk100n25p ixtt100n25p ixtq100n25p.pdf

IXTK 100N25P VDSS = 250 V PolarHTTM IXTQ 100N25P ID25 = 100 A Power MOSFET IXTT 100N25P RDS(on) 27 m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V G D (TAB) DS VGSM Transient 30 V ID

 9.12. Size:293K  first silicon
 ftk100n10p.pdf

SEMICONDUCTOR FTK100N10P TECHNICAL DATA N-Channel Power MOSFET (100V/100A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 1.Gate 2.Drai

 9.13. Size:1068K  jiejie micro
 jmtk100n02a.pdf

JMTK100N02A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 20V, 30A Load Switch RDS(ON)

 9.14. Size:1371K  jiejie micro
 jmtk100p03a.pdf

-30V,-55A, 8.9m P-channel Power Trench MOSFET JMTK100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -55 A Applications RDS(ON)_Typ(@VGS=-10V 6.1 mW Load Switch RDS(ON)_Typ(@VGS=-4.5V 8.9 mW PWM Applica

 9.15. Size:980K  jiejie micro
 jmtk100n03a.pdf

JMTK100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 40A Load Switch RDS(ON)

 9.16. Size:246K  inchange semiconductor
 tk100e08n1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E08N1 ITK100E08N1 FEATURES Low drain-source on-resistance RDS(on) 3.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M

 9.17. Size:252K  inchange semiconductor
 tk100a06n1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100A06N1 ITK100A06N1 FEATURES Low drain-source on-resistance RDS(ON) = 2.7m (typ.) (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLU

 9.18. Size:252K  inchange semiconductor
 tk100a10n1.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK100A10N1 ITK100A10N1 FEATURES Low drain-source on-resistance RDS(ON) = 3.8m (VGS = 10 V) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MA

 9.19. Size:246K  inchange semiconductor
 tk100e06n1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E06N1 ITK100E06N1 FEATURES Low drain-source on-resistance RDS(on) 2.3m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

 9.20. Size:245K  inchange semiconductor
 tk100e10n1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E10N1 ITK100E10N1 FEATURES Low drain-source on-resistance RDS(on) 3.4m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M