TK10A60W5 Datasheet. Equivalente

 ..1. Size:238K  toshiba
 tk10a60w5.pdf

TK10A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W5 TK10A60W5 TK10A60W5 TK10A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 85 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.35 (typ.) by used to Super Junction Stru

 ..2. Size:253K  inchange semiconductor
 tk10a60w5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.45 Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

 6.1. Size:240K  toshiba
 tk10a60w.pdf

TK10A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W TK10A60W TK10A60W TK10A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 6.2. Size:253K  inchange semiconductor
 tk10a60w.pdf

 7.1. Size:248K  toshiba
 tk10a60d.pdf

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK10A60D Unit mm Switching Regulator Applications Low drain-source ON-resistance RDS (ON) = 0.58 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A

 7.2. Size:245K  toshiba
 tk10a60d5.pdf

TK10A60D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK10A60D5 TK10A60D5 TK10A60D5 TK10A60D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) (3) High f

 7.3. Size:253K  inchange semiconductor
 tk10a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D ITK10A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.58 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

 7.4. Size:252K  inchange semiconductor
 tk10a60d5.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D5 ITK10A60D5 FEATURES Low drain-source on-resistance RDS(on) = 0.8 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING