TK14A65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK14A65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO-220SIS

Búsqueda de reemplazo de MOSFET TK14A65W

TK14A65W Datasheet (PDF)

..1. Size:238K toshiba
tk14a65w.pdf

TK14A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14A65WTK14A65WTK14A65WTK14A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

..2. Size:253K inchange semiconductor
tk14a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65WITK14A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

0.1. Size:234K toshiba
tk14a65w5.pdf

TK14A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14A65W5TK14A65W5TK14A65W5TK14A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

0.2. Size:253K inchange semiconductor
tk14a65w5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65W5ITK14A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulator

9.1. Size:180K toshiba
tk14a55d.pdf

TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK14A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.2. Size:252K inchange semiconductor
tk14a55d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A55DITK14A55DFEATURESLow drain-source on-resistance:RDS(on) = 0.31 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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