TK25A60X5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK25A60X5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 25 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 60 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia entre drenaje y fuente RDS(on): 0.14 Ohm
Paquete / Cubierta: TO-220SIS
Búsqueda de reemplazo de MOSFET TK25A60X5
TK25A60X5 Datasheet (PDF)
tk25a60x5.pdf
TK25A60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60X5TK25A60X5TK25A60X5TK25A60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc
tk25a60x5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X5, ITK25A60X5FEATURESLow drain-source on-resistance: RDS(ON) = 0.12 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula
tk25a60x.pdf
TK25A60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25A60XTK25A60XTK25A60XTK25A60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
tk25a60x.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25A60X,ITK25A60XFEATURESLow drain-source on-resistance: RDS(ON) = 0.105 (typ.)High-speed switching properties with lower capacitance.Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION
tk25a20d.pdf
TK25A20DMOSFETs Silicon N-Channel MOS (-MOS)TK25A20DTK25A20DTK25A20DTK25A20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.047 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth
tk25a10k3.pdf
TK25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK25A10K3 Swiching Regulator Applications Low drain-source ON resistance: RDS (ON) = 31 m (typ.) Unit: mm High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 100 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu
tk25a20d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK25A20DITK25A20DFEATURESLow drain-source on-resistance:RDS(on) = 0.047 (typ.)Enhancement mode:Vth = 1.5 to 3.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk25a10k3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK25A10K3ITK25A10K3FEATURESLow drain-source on-resistance:RDS(ON) = 31m (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATIN
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