TK25E60X Todos los transistores

 

TK25E60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK25E60X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-220
 

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TK25E60X Datasheet (PDF)

 ..1. Size:247K  toshiba
 tk25e60x.pdf pdf_icon

TK25E60X

TK25E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60XTK25E60XTK25E60XTK25E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 ..2. Size:246K  inchange semiconductor
 tk25e60x.pdf pdf_icon

TK25E60X

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60XITK25E60XFEATURESLow drain-source on-resistance:RDS(on) 0.125.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:373K  toshiba
 tk25e60x5.pdf pdf_icon

TK25E60X

TK25E60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60X5TK25E60X5TK25E60X5TK25E60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc

 0.2. Size:246K  inchange semiconductor
 tk25e60x5.pdf pdf_icon

TK25E60X

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60X5ITK25E60X5FEATURESLow drain-source on-resistance:RDS(on) 0.14.Enhancement mode:Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... TK20N60W , TK20N60W5 , TK20V60W , TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , SKD502T , TK25E60X5 , TK25N60X , TK25N60X5 , TK25S06N1L , TK25V60X , TK25V60X5 , TK28A65W , TK28E65W .

History: SSM6K06FU | P4004ED | LNND04R120

 

 
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