TK31N60X Todos los transistores

 

TK31N60X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK31N60X
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
   Paquete / Cubierta: TO-247
 

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TK31N60X Datasheet (PDF)

 ..1. Size:249K  toshiba
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TK31N60X

TK31N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31N60XTK31N60XTK31N60XTK31N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

 7.1. Size:244K  toshiba
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TK31N60X

TK31N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31N60W5TK31N60W5TK31N60W5TK31N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by used to Super Junction St

 7.2. Size:255K  toshiba
tk31n60w.pdf pdf_icon

TK31N60X

TK31N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31N60WTK31N60WTK31N60WTK31N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.3. Size:213K  inchange semiconductor
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TK31N60X

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31N60WFEATURESWith TO-247 packagingEasy to useHigh speed switchingVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

Otros transistores... TK30E06N1 , TK31A60W , TK31E60W , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , AON7403 , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 .

History: SQJ951EP

 

 
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