TK31V60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK31V60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 240 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm
Encapsulados: DFN8X8
Búsqueda de reemplazo de TK31V60W MOSFET
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TK31V60W datasheet
tk31v60w.pdf
TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31V60W TK31V60W TK31V60W TK31V60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.078 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk31v60w5.pdf
TK31V60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31V60W5 TK31V60W5 TK31V60W5 TK31V60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.087 (typ.) (3) Easy to control Gate switc
tk31v60x.pdf
TK31V60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31V60X TK31V60X TK31V60X TK31V60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.078 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
Otros transistores... TK31A60W , TK31E60W , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , IRFB7545 , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 , TK34E10N1 , TK35A08N1 .
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