TK39N60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK39N60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: TO-247
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TK39N60W datasheet
tk39n60w.pdf
TK39N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W TK39N60W TK39N60W TK39N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk39n60w.pdf
isc N-Channel MOSFET Transistor TK39N60W FEATURES With TO-247 packaging With low gate drive requirements Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V
tk39n60w5.pdf
TK39N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK39N60W5 TK39N60W5 TK39N60W5 TK39N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 150 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.062 (typ.) by using Super Junction Stru
tk39n60x.pdf
TK39N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK39N60X TK39N60X TK39N60X TK39N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.055 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
Otros transistores... TK35A65W , TK35A65W5 , TK35E08N1 , TK35N65W , TK35N65W5 , TK39A60W , TK39J60W , TK39J60W5 , IRF540N , TK39N60W5 , TK39N60X , TK3P80E , TK40A06N1 , TK40E06N1 , TK40S06N1L , TK42A12N1 , TK42E12N1 .
History: SMN18T50FD | WM03DN85A | 2SK1636S | NTMD6N04R2
History: SMN18T50FD | WM03DN85A | 2SK1636S | NTMD6N04R2
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