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TK5A60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK5A60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-220SIS
 

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TK5A60W Datasheet (PDF)

 ..1. Size:235K  toshiba
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TK5A60W

TK5A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK5A60WTK5A60WTK5A60WTK5A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.77 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 ..2. Size:253K  inchange semiconductor
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TK5A60W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60WITK5A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.77 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

 0.1. Size:531K  toshiba
tk5a60w5.pdf pdf_icon

TK5A60W

TK5A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK5A60W5TK5A60W5TK5A60W5TK5A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 65 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)by using Super Junction Structure : D

 0.2. Size:258K  inchange semiconductor
tk5a60w5.pdf pdf_icon

TK5A60W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A60W5ITK5A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.95Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.23mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

Otros transistores... TK4Q60DA , TK50A04K3 , TK50S04K3L , TK55S10N1 , TK56A12N1 , TK56E12N1 , TK58A06N1 , TK58E06N1 , K3569 , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , TK5P65W , TK5Q60W , TK5Q65W , TK60F08K3 .

 

 
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