TK5P65W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK5P65W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.22 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de TK5P65W MOSFET
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TK5P65W datasheet
tk5p65w.pdf
TK5P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5P65W TK5P65W TK5P65W TK5P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.02 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement
tk5p60w.pdf
TK5P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK5P60W TK5P60W TK5P60W TK5P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.77 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance
tk5p60w5.pdf
TK5P60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK5P60W5 TK5P60W5 TK5P60W5 TK5P60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 65 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.84 (typ.) by using Super Junction Structure
Otros transistores... TK56E12N1 , TK58A06N1 , TK58E06N1 , TK5A60W , TK5A60W5 , TK5A65W , TK5P60W , TK5P60W5 , IRF9540N , TK5Q60W , TK5Q65W , TK60F08K3 , TK62J60W , TK62J60W5 , TK62N60W , TK62N60W5 , TK62N60X .
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