TK6A60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK6A60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 30 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 6.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.7 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 12 pF
   Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
   Paquete / Cubierta: TO-220SIS

Búsqueda de reemplazo de MOSFET TK6A60W

TK6A60W Datasheet (PDF)

..1. Size:237K toshiba
tk6a60w.pdf

TK6A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A60WTK6A60WTK6A60WTK6A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

..2. Size:253K inchange semiconductor
tk6a60w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A60WITK6A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.68 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

8.1. Size:188K toshiba
tk6a60d.pdf

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

9.1. Size:376K toshiba
tk6a65w.pdf

TK6A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A65WTK6A65WTK6A65WTK6A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.85 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

9.2. Size:199K toshiba
tk6a65d.pdf

TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK6A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.3. Size:253K inchange semiconductor
tk6a65w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65WITK6A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.85 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

9.4. Size:253K inchange semiconductor
tk6a65d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65DITK6A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: