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TK7P65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK7P65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: DPAK
 

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TK7P65W Datasheet (PDF)

 ..1. Size:378K  toshiba
 tk7p65w.pdf pdf_icon

TK7P65W

TK7P65WMOSFETs Silicon N-Channel MOS (DTMOS)TK7P65WTK7P65WTK7P65WTK7P65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.66 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement

 9.1. Size:242K  toshiba
 tk7p60w5.pdf pdf_icon

TK7P65W

TK7P60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK7P60W5TK7P60W5TK7P60W5TK7P60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 75 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.54 (typ.) by used to Super

 9.2. Size:242K  toshiba
 tk7p60w.pdf pdf_icon

TK7P65W

TK7P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK7P60WTK7P60WTK7P60WTK7P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancem

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History: SIR880ADP | FDPC4044 | 2SK1582 | TK9A65W | SRT08N025HC56TR-G | SWP3205

 

 
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