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TK8A60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK8A60W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 30 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 20 nS
   Conductancia de drenaje-sustrato (Cd): 16 pF
   Resistencia entre drenaje y fuente RDS(on): 0.5 Ohm
   Paquete / Cubierta: TO-220SIS

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TK8A60W Datasheet (PDF)

 ..1. Size:264K  toshiba
tk8a60w.pdf

TK8A60W
TK8A60W

TK8A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK8A60WTK8A60WTK8A60WTK8A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.42 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance

 0.1. Size:261K  toshiba
tk8a60w5.pdf

TK8A60W
TK8A60W

TK8A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK8A60W5TK8A60W5TK8A60W5TK8A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 80 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.44 (typ.) by used to Super

 8.1. Size:197K  toshiba
tk8a60da.pdf

TK8A60W
TK8A60W

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A60DA Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:253K  inchange semiconductor
tk8a60da.pdf

TK8A60W
TK8A60W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A60DAITK8A60DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.8 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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