TK8P60W5 Todos los transistores

 

TK8P60W5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK8P60W5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm

Encapsulados: DPAK

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TK8P60W5 datasheet

 ..1. Size:282K  toshiba
 tk8p60w5.pdf pdf_icon

TK8P60W5

TK8P60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P60W5 TK8P60W5 TK8P60W5 TK8P60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 80 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.44 (typ.) by used to Super

 7.1. Size:300K  toshiba
 tk8p60w.pdf pdf_icon

TK8P60W5

TK8P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P60W TK8P60W TK8P60W TK8P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.42 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 9.1. Size:263K  toshiba
 tk8p65w.pdf pdf_icon

TK8P60W5

TK8P65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK8P65W TK8P65W TK8P65W TK8P65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.55 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

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