TMD5N60Z Todos los transistores

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TMD5N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TMD5N60Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 98.4 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 69 pF

Resistencia drenaje-fuente RDS(on): 2.1 Ohm

Empaquetado / Estuche: DPAK

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TMD5N60Z Datasheet (PDF)

1.1. tmd5n60z.pdf Size:461K _upd-mosfet

TMD5N60Z
TMD5N60Z

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

3.1. tmd5n60az.pdf Size:457K _upd-mosfet

TMD5N60Z
TMD5N60Z

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

 5.1. tmd5n50.pdf Size:345K _upd-mosfet

TMD5N60Z
TMD5N60Z

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

5.2. tmd5n40zg.pdf Size:617K _upd-mosfet

TMD5N60Z
TMD5N60Z

TMD5N40ZG/TMU5N40ZG Features VDSS = 440 V @Tjmax  Low gate charge ID = 3.4A  100% avalanche tested RDS(on) = 1.6 W(max) @ VGS= 10 V  Improved dv/dt capability  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK D I-PAK G S Device Package Marking Remark TMD5N40ZG/TMU5N40ZG D-PAK/I-PAK TMD5N40ZG/TMU5N40ZG Halogen Free Abso

 5.3. tmd5n50g.pdf Size:345K _upd-mosfet

TMD5N60Z
TMD5N60Z

TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Features VDSS = 550 V @Tjmax  Low gate charge ID = 4.5A  100% avalanche tested RDS(ON) = 1.65 W(max) @ VGS= 10 V  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D I-PAK D-PAK G S Device Package Marking Remark TMD5N50/TMU5N50 D-PAK/I-PAK TMD5N50/TMU5N50 RoHS

Otros transistores... TMD4N60 , TMD4N60AZ , TMD4N65AZ , TMD4N65Z , TMD5N40ZG , TMD5N50 , TMD5N50G , TMD5N60AZ , IRF520 , AOD434 , TMD630Z , TMD6N65G , TMD6N70 , TMD7N60Z , TMD7N65AZ , TMD7N65Z , TMD830 .

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