IRFU320 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU320 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 120 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Encapsulados: TO251
📄📄 Copiar
Búsqueda de reemplazo de IRFU320 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFU320 datasheet
irfr320pbf irfu320pbf.pdf
PD-95013A IRFR320PbF IRFU320PbF Lead-Free 12/13/04 Document Number 91273 www.vishay.com 1 IRFR/U320PbF Document Number 91273 www.vishay.com 2 IRFR/U320PbF Document Number 91273 www.vishay.com 3 IRFR/U320PbF Document Number 91273 www.vishay.com 4 IRFR/U320PbF Document Number 91273 www.vishay.com 5 IRFR/U320PbF Document Number 91273 www.vishay.com 6 IRFR/U320
irfr320pbf irfu320pbf.pdf
PD-95013A IRFR320PbF IRFU320PbF Lead-Free www.irf.com 1 12/13/04 IRFR/U320PbF 2 www.irf.com IRFR/U320PbF www.irf.com 3 IRFR/U320PbF 4 www.irf.com IRFR/U320PbF www.irf.com 5 IRFR/U320PbF 6 www.irf.com IRFR/U320PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current
irfr320 irfu320 sihfr320 sihfu320.pdf
IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Surface Mount (IRFR320/SiHFR320) Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFU320/SiHFU320) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11 Fast Switching
irfr320 irfu320 sihfr320 sihfu320.pdf
IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Surface Mount (IRFR320,SiHFR320) RDS(on) ( )VGS = 10 V 1.8 Straight Lead (IRFU320,SiHFU320) Qg (Max.) (nC) 20 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of
irfu320.pdf
iscN-Channel MOSFET Transistor IRFU320 FEATURES Low drain-source on-resistance RDS(ON) 1.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
auirfr3607 auirfu3607.pdf
AUTOMOTIVE GRADE AUIRFR3607 AUIRFU3607 Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS 75V Fast Switching RDS(on) typ. 7.34m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant max. 9.0m Automotive Qualified * G ID (Silicon Limited) 80A S ID (Package Limited) 56A Description Specifically des
irfu3707zpbf.pdf
PD - 95443B IRFR3707ZPbF IRFU3707ZPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara
irfu3710z.pdf
PD - 94740A IRFR3710Z AUTOMOTIVE MOSFET IRFU3710Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 100V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 18m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 42A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the lat
irfr3708pbf irfu3708pbf.pdf
PD - 95071A IRFR3708PbF SMPS MOSFET IRFU3708PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-P
irfr3709zcpbf irfu3709zcpbf.pdf
PD - 96046 IRFR3709ZCPbF IRFU3709ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char
irfr3607pbf irfu3607pbf.pdf
PD - 97312B IRFR3607PbF IRFU3607PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m max. 9.0m G ID (Silicon Limited) 80A Benefits l Improved Gate, Avalanche and Dynamic S ID (Package Limited) 56A dv
irfr3711zpbf irfu3711zpbf.pdf
PD - 95074A IRFR3711ZPbF IRFU3711ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak I
irfr3411pbf irfu3411pbf.pdf
PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to
irfr3505pbf irfu3505pbf.pdf
PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis
irfr3709zpbf irfu3709zpbf.pdf
PD - 95072A IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara
irfr3910pbf irfu3910pbf.pdf
PD - 95079A IRFR3910PbF IRFU3910PbF Lead-Free www.irf.com 1 1/7/05 IRFR/U3910PbF 2 www.irf.com IRFR/U3910PbF www.irf.com 3 IRFR/U3910PbF 4 www.irf.com IRFR/U3910PbF www.irf.com 5 IRFR/U3910PbF 6 www.irf.com IRFR/U3910PbF www.irf.com 7 IRFR/U3910PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat
irfr3303pbf irfu3303pbf.pdf
PD - 95070A IRFR3303PbF IRFU3303PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR3303) D l Straight Lead (IRFU3033) VDSS = 30V l Advanced Process Technology l Fast Switching RDS(on) = 0.031 l Fully Avalanche Rated G l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre
irfr3418pbf irfu3418pbf.pdf
PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf
PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro
irfr310pbf irfu310pbf.pdf
PD - 95028A IRFR310PbF IRFU310PbF Lead-Free 12/10/04 Document Number 91272 www.vishay.com 1 IRFR/U310PbF Document Number 91272 www.vishay.com 2 IRFR/U310PbF Document Number 91272 www.vishay.com 3 IRFR/U310PbF Document Number 91272 www.vishay.com 4 IRFR/U310PbF Document Number 91272 www.vishay.com 5 IRFR/U310PbF Document Number 91272 www.vishay.com 6 IRFR/U3
irfu3709.pdf
PD - 94103 IRFU3709 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC 30V 9.0m 90A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage I-Pa
irfr3707zcpbf irfu3707zcpbf.pdf
PD - 96045 IRFR3707ZCPbF IRFU3707ZCPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char
irfr3704zpbf irfu3704zpbf.pdf
PD - 95442A IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak
irfr3706 irfu3706.pdf
PD - 93933B IRFR3706 SMPS MOSFET IRFU3706 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC 20V 9.0m 75A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalan
irfr3410pbf irfu3410pbf.pdf
PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu
irfr3707 irfu3707.pdf
PD - 93934B IRFR3707 SMPS MOSFET IRFU3707 Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current
irfu3709z.pdf
PD - 94712 IRFR3709Z IRFU3709Z Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche
irfr3504zpbf irfu3504zpbf.pdf
PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re
irfr3911pbf irfu3911pbf.pdf
PD - 95373A IRFR3911PbF SMPS MOSFET IRFU3911PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.115 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I
irfr3412pbf irfu3412pbf.pdf
PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha
irfr3704pbf irfu3704pbf.pdf
PD - 95034A IRFR3704PbF SMPS MOSFET IRFU3704PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully
irfr3711pbf irfu3711pbf.pdf
PD- 95073A IRFR3711PbF SMPS MOSFET IRFU3711PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Tu
irfr3704 irfu3704.pdf
PD - 93887D IRFR3704 SMPS MOSFET IRFU3704 Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Aval
irfr3806pbf irfu3806pbf.pdf
PD - 97313 IRFR3806PbF IRFU3806PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized C
irfr3518pbf irfu3518pbf.pdf
PD - 95510A IRFR3518PbF IRFU3518PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Lead-Free 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current
irfr3706pbf irfu3706pbf.pdf
PD - 95097A IRFR3706PbF SMPS MOSFET IRFU3706PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Ch
irfr3711 irfu3711.pdf
PD- 94061B IRFR3711 SMPS MOSFET IRFU3711 Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on
irfr310pbf irfu310pbf sihfr310 sihfu310.pdf
IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast Switching Qgd (nC) 6.5 Ful
irfr310 irfu310 sihfr310 sihfu310.pdf
IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5 Configuration S
irfr3707zpbf irfu3707zpbf.pdf
IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF
irfu3410p.pdf
IRFU3410P www.VBsemi.tw www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.036 at VGS = 10 V 35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View
irfu3505p.pdf
IRFU3505P www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbo
irfu3910p.pdf
IRFU3910P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
irfu3711.pdf
isc N-Channel MOSFET Transistor IRFU3711 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3710z.pdf
isc N-Channel MOSFET Transistor IRFU3710Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu3504z.pdf
isc N-Channel MOSFET Transistor IRFU3504Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu3910.pdf
isc N-Channel MOSFET Transistor IRFU3910 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3411.pdf
isc N-Channel MOSFET Transistor IRFU3411 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3709zc.pdf
isc N-Channel MOSFET Transistor IRFU3709ZC FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
irfu3704z.pdf
isc N-Channel MOSFET Transistor IRFU3704Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu3707z.pdf
isc N-Channel MOSFET Transistor IRFU3707Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu3711z.pdf
isc N-Channel MOSFET Transistor IRFU3711Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu310.pdf
iscN-Channel MOSFET Transistor IRFU310 FEATURES Low drain-source on-resistance RDS(ON) 3.6 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
irfu3607pbf.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU3607PbF FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =
irfu3709z.pdf
isc N-Channel MOSFET Transistor IRFU3709Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
irfu3410.pdf
isc N-Channel MOSFET Transistor IRFU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3505.pdf
isc N-Channel MOSFET Transistor IRFU3505 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3518.pdf
isc N-Channel MOSFET Transistor IRFU3518 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3708.pdf
isc N-Channel MOSFET Transistor IRFU3708 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irfu3806.pdf
isc N-Channel MOSFET Transistor IRFU3806 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
Otros transistores... IRFU220, IRFU220A, IRFU222, IRFU224, IRFU224A, IRFU230A, IRFU310, IRFU310A, IRFB31N20D, IRFU320A, IRFU3303, IRFU3910, IRFU410, IRFU4105, IRFU411, IRFU420, IRFU420A
Parámetros del MOSFET. Cómo se afectan entre sí.
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: CS95118 | CS85105A | CS75N45 | CS72N12 | CS55N50 | CS48N75A | CS40N27 | MSQ60P04D | MSQ40P07D | MSQ30P40D | MSQ30P15 | MSQ30P07D | MSQ100N03D | MSHM60P14 | MSHM40N085 | MSHM30N46
Popular searches
tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor | irfbc40