IRFU3910 Datasheet. Equivalente

 ..1. Size:392K  international rectifier
 irfr3910pbf irfu3910pbf.pdf

PD - 95079A IRFR3910PbF IRFU3910PbF Lead-Free www.irf.com 1 1/7/05 IRFR/U3910PbF 2 www.irf.com IRFR/U3910PbF www.irf.com 3 IRFR/U3910PbF 4 www.irf.com IRFR/U3910PbF www.irf.com 5 IRFR/U3910PbF 6 www.irf.com IRFR/U3910PbF www.irf.com 7 IRFR/U3910PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat

 ..2. Size:261K  inchange semiconductor
 irfu3910.pdf

isc N-Channel MOSFET Transistor IRFU3910 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 0.1. Size:841K  cn vbsemi
 irfu3910p.pdf

IRFU3910P www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

 7.1. Size:225K  international rectifier
 irfr3911pbf irfu3911pbf.pdf

PD - 95373A IRFR3911PbF SMPS MOSFET IRFU3911PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.115 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I

 9.1. Size:210K  1
 irfu310a irfr310a.pdf

 9.2. Size:211K  1
 irfu320a irfr320a.pdf

 9.3. Size:485K  international rectifier
 auirfr3607 auirfu3607.pdf

AUTOMOTIVE GRADE AUIRFR3607 AUIRFU3607 Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS 75V Fast Switching RDS(on) typ. 7.34m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant max. 9.0m Automotive Qualified * G ID (Silicon Limited) 80A S ID (Package Limited) 56A Description Specifically des

 9.4. Size:1849K  international rectifier
 irfr320pbf irfu320pbf.pdf

PD-95013A IRFR320PbF IRFU320PbF Lead-Free 12/13/04 Document Number 91273 www.vishay.com 1 IRFR/U320PbF Document Number 91273 www.vishay.com 2 IRFR/U320PbF Document Number 91273 www.vishay.com 3 IRFR/U320PbF Document Number 91273 www.vishay.com 4 IRFR/U320PbF Document Number 91273 www.vishay.com 5 IRFR/U320PbF Document Number 91273 www.vishay.com 6 IRFR/U320

 9.5. Size:363K  international rectifier
 irfu3707zpbf.pdf

PD - 95443B IRFR3707ZPbF IRFU3707ZPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara

 9.6. Size:728K  international rectifier
 irfu3710z.pdf

PD - 94740A IRFR3710Z AUTOMOTIVE MOSFET IRFU3710Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 100V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 18m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 42A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the lat

 9.7. Size:220K  international rectifier
 irfr3708pbf irfu3708pbf.pdf

PD - 95071A IRFR3708PbF SMPS MOSFET IRFU3708PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-P

 9.8. Size:1814K  international rectifier
 irfr320pbf irfu320pbf.pdf

PD-95013A IRFR320PbF IRFU320PbF Lead-Free www.irf.com 1 12/13/04 IRFR/U320PbF 2 www.irf.com IRFR/U320PbF www.irf.com 3 IRFR/U320PbF 4 www.irf.com IRFR/U320PbF www.irf.com 5 IRFR/U320PbF 6 www.irf.com IRFR/U320PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current

 9.9. Size:300K  international rectifier
 irfr3709zcpbf irfu3709zcpbf.pdf

PD - 96046 IRFR3709ZCPbF IRFU3709ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

 9.10. Size:366K  international rectifier
 irfr3607pbf irfu3607pbf.pdf

PD - 97312B IRFR3607PbF IRFU3607PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m max. 9.0m G ID (Silicon Limited) 80A Benefits l Improved Gate, Avalanche and Dynamic S ID (Package Limited) 56A dv

 9.11. Size:262K  international rectifier
 irfr3711zpbf irfu3711zpbf.pdf

PD - 95074A IRFR3711ZPbF IRFU3711ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak I

 9.12. Size:230K  international rectifier
 irfr3411pbf irfu3411pbf.pdf

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

 9.13. Size:332K  international rectifier
 irfr3505pbf irfu3505pbf.pdf

PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis

 9.14. Size:265K  international rectifier
 irfr3709zpbf irfu3709zpbf.pdf

PD - 95072A IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara

 9.15. Size:250K  international rectifier
 irfr3303pbf irfu3303pbf.pdf

PD - 95070A IRFR3303PbF IRFU3303PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR3303) D l Straight Lead (IRFU3033) VDSS = 30V l Advanced Process Technology l Fast Switching RDS(on) = 0.031 l Fully Avalanche Rated G l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

 9.16. Size:239K  international rectifier
 irfr3418pbf irfu3418pbf.pdf

PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

 9.17. Size:359K  international rectifier
 irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

 9.18. Size:1830K  international rectifier
 irfr310pbf irfu310pbf.pdf

PD - 95028A IRFR310PbF IRFU310PbF Lead-Free 12/10/04 Document Number 91272 www.vishay.com 1 IRFR/U310PbF Document Number 91272 www.vishay.com 2 IRFR/U310PbF Document Number 91272 www.vishay.com 3 IRFR/U310PbF Document Number 91272 www.vishay.com 4 IRFR/U310PbF Document Number 91272 www.vishay.com 5 IRFR/U310PbF Document Number 91272 www.vishay.com 6 IRFR/U3

 9.19. Size:88K  international rectifier
 irfu3709.pdf

PD - 94103 IRFU3709 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC 30V 9.0m 90A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage I-Pa

 9.20. Size:295K  international rectifier
 irfr3707zcpbf irfu3707zcpbf.pdf

PD - 96045 IRFR3707ZCPbF IRFU3707ZCPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

 9.21. Size:266K  international rectifier
 irfr3704zpbf irfu3704zpbf.pdf

PD - 95442A IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak

 9.22. Size:220K  international rectifier
 irfr3706 irfu3706.pdf

PD - 93933B IRFR3706 SMPS MOSFET IRFU3706 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC 20V 9.0m 75A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalan

 9.23. Size:231K  international rectifier
 irfr3410pbf irfu3410pbf.pdf

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu

 9.24. Size:139K  international rectifier
 irfr3707 irfu3707.pdf

PD - 93934B IRFR3707 SMPS MOSFET IRFU3707 Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current

 9.25. Size:219K  international rectifier
 irfu3709z.pdf

PD - 94712 IRFR3709Z IRFU3709Z Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche

 9.26. Size:331K  international rectifier
 irfr3504zpbf irfu3504zpbf.pdf

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 9.27. Size:228K  international rectifier
 irfr3412pbf irfu3412pbf.pdf

PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha

 9.28. Size:221K  international rectifier
 irfr3704pbf irfu3704pbf.pdf

PD - 95034A IRFR3704PbF SMPS MOSFET IRFU3704PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully

 9.29. Size:232K  international rectifier
 irfr3711pbf irfu3711pbf.pdf

PD- 95073A IRFR3711PbF SMPS MOSFET IRFU3711PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Tu

 9.30. Size:156K  international rectifier
 irfr3704 irfu3704.pdf

PD - 93887D IRFR3704 SMPS MOSFET IRFU3704 Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Aval

 9.31. Size:506K  international rectifier
 irfr3806pbf irfu3806pbf.pdf

PD - 97313 IRFR3806PbF IRFU3806PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized C

 9.32. Size:228K  international rectifier
 irfr3518pbf irfu3518pbf.pdf

PD - 95510A IRFR3518PbF IRFU3518PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Lead-Free 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

 9.33. Size:221K  international rectifier
 irfr3706pbf irfu3706pbf.pdf

PD - 95097A IRFR3706PbF SMPS MOSFET IRFU3706PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Ch

 9.34. Size:163K  international rectifier
 irfr3711 irfu3711.pdf

PD- 94061B IRFR3711 SMPS MOSFET IRFU3711 Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on

 9.35. Size:33K  samsung
 irfu0xx irfu1xx irfu2xx irfu3xx irfu4xx irfu9xxx .pdf

 9.36. Size:818K  vishay
 irfr310pbf irfu310pbf sihfr310 sihfu310.pdf

IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast Switching Qgd (nC) 6.5 Ful

 9.37. Size:1412K  vishay
 irfr310 irfu310 sihfr310 sihfu310.pdf

IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5 Configuration S

 9.38. Size:1555K  vishay
 irfr320 irfu320 sihfr320 sihfu320.pdf

IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Surface Mount (IRFR320/SiHFR320) Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFU320/SiHFU320) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11 Fast Switching

 9.39. Size:546K  infineon
 irfr3707zpbf irfu3707zpbf.pdf

IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF

 9.40. Size:860K  infineon
 irfr320 irfu320 sihfr320 sihfu320.pdf

IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Surface Mount (IRFR320,SiHFR320) RDS(on) ( )VGS = 10 V 1.8 Straight Lead (IRFU320,SiHFU320) Qg (Max.) (nC) 20 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of

 9.41. Size:842K  cn vbsemi
 irfu3410p.pdf

IRFU3410P www.VBsemi.tw www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.036 at VGS = 10 V 35 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View

 9.42. Size:2741K  cn vbsemi
 irfu3505p.pdf

IRFU3505P www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.011 at VGS = 10 V 55 Material categorization 60 0.012 at VGS = 4.5 V 47 TO-251 D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbo

 9.43. Size:297K  inchange semiconductor
 irfu320.pdf

iscN-Channel MOSFET Transistor IRFU320 FEATURES Low drain-source on-resistance RDS(ON) 1.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.44. Size:260K  inchange semiconductor
 irfu3711.pdf

isc N-Channel MOSFET Transistor IRFU3711 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.45. Size:261K  inchange semiconductor
 irfu3710z.pdf

isc N-Channel MOSFET Transistor IRFU3710Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.46. Size:261K  inchange semiconductor
 irfu3504z.pdf

isc N-Channel MOSFET Transistor IRFU3504Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.47. Size:261K  inchange semiconductor
 irfu3411.pdf

isc N-Channel MOSFET Transistor IRFU3411 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.48. Size:262K  inchange semiconductor
 irfu3709zc.pdf

isc N-Channel MOSFET Transistor IRFU3709ZC FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.49. Size:261K  inchange semiconductor
 irfu3704z.pdf

isc N-Channel MOSFET Transistor IRFU3704Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.50. Size:261K  inchange semiconductor
 irfu3707z.pdf

isc N-Channel MOSFET Transistor IRFU3707Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.51. Size:261K  inchange semiconductor
 irfu3711z.pdf

isc N-Channel MOSFET Transistor IRFU3711Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.52. Size:296K  inchange semiconductor
 irfu310.pdf

iscN-Channel MOSFET Transistor IRFU310 FEATURES Low drain-source on-resistance RDS(ON) 3.6 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.53. Size:208K  inchange semiconductor
 irfu3607pbf.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU3607PbF FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =

 9.54. Size:262K  inchange semiconductor
 irfu3709z.pdf

isc N-Channel MOSFET Transistor IRFU3709Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.55. Size:261K  inchange semiconductor
 irfu3410.pdf

isc N-Channel MOSFET Transistor IRFU3410 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.56. Size:261K  inchange semiconductor
 irfu3505.pdf

isc N-Channel MOSFET Transistor IRFU3505 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.57. Size:261K  inchange semiconductor
 irfu3518.pdf

isc N-Channel MOSFET Transistor IRFU3518 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.58. Size:261K  inchange semiconductor
 irfu3708.pdf

isc N-Channel MOSFET Transistor IRFU3708 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.59. Size:261K  inchange semiconductor
 irfu3806.pdf

isc N-Channel MOSFET Transistor IRFU3806 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN