TMPF11N50SG Todos los transistores

 

TMPF11N50SG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TMPF11N50SG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 374 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: TO-220F

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TMPF11N50SG datasheet

 ..1. Size:340K  trinnotech
tmp11n50sg tmpf11n50sg.pdf pdf_icon

TMPF11N50SG

TMP11N50SG/TMPF11N50SG VDSS = 550 V @Tjmax Features ID = 10A Low gate charge RDS(ON) = 0.7 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP11N50SG / TMPF11N50SG TO-220 / TO-220F TMP11N50SG / TMPF11N50SG Halogen Fre

 5.1. Size:353K  trinnotech
tmp11n50 tmpf11n50.pdf pdf_icon

TMPF11N50SG

TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax Features ID = 11A Low gate charge RDS(ON) = 0.67 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP11N50 / TMPF11N50 TO-220 / TO-220F TMP11N50 / TMPF11N50

 9.1. Size:609K  trinnotech
tmp10n80 tmpf10n80.pdf pdf_icon

TMPF11N50SG

TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N80 / TMPF10N80 TO-220 / TO-220F TMP10N80 / TMPF10N80 RoHS TMP10N

 9.2. Size:604K  trinnotech
tmp12n60a tmpf12n60a.pdf pdf_icon

TMPF11N50SG

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

Otros transistores... TMP9N70 , TMP9N90 , TMPF10N60 , TMPF10N60A , TMPF10N65 , TMPF10N65A , TMPF10N80 , TMPF11N50 , AOD4184A , TMPF12N60 , TMPF12N60A , TMPF13N50 , TMPF13N50A , TMPF15N50 , TMPF16N25Z , TMPF16N60 , TMPF16N60A .

 

 

 


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