FMR23N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMR23N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO-3PF
Búsqueda de reemplazo de FMR23N60E MOSFET
FMR23N60E Datasheet (PDF)
fmr23n60e.pdf

FMR23N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)H
fmr23n60e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMR23N60EFEATURESWith TO-3PML packagingMaintains both low power loss andlow noiseVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible po
fmr23n60es.pdf

FMR23N60ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.5V)
fmr23n50e.pdf

FMR23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3PFLower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)H
Otros transistores... FMP76-010T , FMR09N90E , FMR11N90E , FMR17N60ES , FMR19N60E , FMR19N60ES , FMR21N50ES , FMR23N50ES , 10N60 , FMR23N60ES , FMR28N50E , FMR28N50ES , FMV03N60E , FMV05N50E , FMV05N60E , FMV06N60E , FMV06N60ES .
History: 2SK3433 | SM8A02NSF | IRFS645 | QM3006M3 | APM7318K | CSD17381F4 | 2SJ234S
History: 2SK3433 | SM8A02NSF | IRFS645 | QM3006M3 | APM7318K | CSD17381F4 | 2SJ234S



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