FMV11N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FMV11N60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.5 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de FMV11N60E MOSFET
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FMV11N60E datasheet
fmv11n60e.pdf
FMV11N60E FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-E3 series Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0
fmv11n60e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV11N60E FEATURES With TO-220F packaging Maintains both low power loss andlow noise Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible po
fmv11n90e.pdf
FMV11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.
Otros transistores... FMV06N60E, FMV06N60ES, FMV06N90E, FMV07N50E, FMV08N50E, FMV09N90E, FMV10N60E, FMV10N80E, 2SK3878, FMV11N90E, FMV12N50E, FMV12N50ES, FMV12N60ES, FMV13N60E, FMV13N60ES, FMV16N50E, FMV16N50ES
History: BUK9512-55B
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