FMV20N50E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FMV20N50E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 95 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm

Encapsulados: TO-220F

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FMV20N50E datasheet

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 fmv20n50e.pdf pdf_icon

FMV20N50E

FMV20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.

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 fmv20n50es.pdf pdf_icon

FMV20N50E

FMV20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2

 8.1. Size:448K  fuji
 fmv20n60s1.pdf pdf_icon

FMV20N50E

http //www.fujielectric.com/products/semiconductor/ FMV20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-220F(SLS) Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S) Power condi

 8.2. Size:239K  inchange semiconductor
 fmv20n60s1.pdf pdf_icon

FMV20N50E

isc N-Channel MOSFET Transistor FMV20N60S1 FEATURES Low on-resistance RDS(on) 0.19 (max) Low switching loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION UPS (Uninterruptible Power Supply) Power conditioner system Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... FMV13N60ES, FMV16N50E, FMV16N50ES, FMV16N60E, FMV16N60ES, FMV17N60ES, FMV19N60E, FMV19N60ES, AON7410, FMV20N50ES, FMV20N60S1, FMV21N50ES, FMV23N50ES, FMV24N25G, FMV30N60S1, FMW20N60S1HF, FMW30N60S1HF