FQA13N80 Todos los transistores

 

FQA13N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA13N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 12.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 68 nC

Tiempo de elevación (tr): 150 nS

Conductancia de drenaje-sustrato (Cd): 275 pF

Resistencia drenaje-fuente RDS(on): 0.75 Ohm

Empaquetado / Estuche: TO-3P

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FQA13N80 Datasheet (PDF)

1.1. fqa13n80.pdf Size:731K _upd-mosfet

FQA13N80
FQA13N80

March 2001 TM QFET FQA13N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 68 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailore

1.2. fqa13n80 f109.pdf Size:890K _fairchild_semi

FQA13N80
FQA13N80

July 2007 QFET FQA13N80_F109 800V N-Channel MOSFET Features Description 12.6A, 800V, RDS(on) = 0.75? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 68 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 30pF) This advanced technology has been especially tailored to Fast switc

 4.1. fqa13n50c.pdf Size:699K _upd-mosfet

FQA13N80
FQA13N80

® QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fa

4.2. fqa13n50.pdf Size:721K _upd-mosfet

FQA13N80
FQA13N80

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 13.4A, 500V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been

 4.3. fqa13n50cf.pdf Size:776K _fairchild_semi

FQA13N80
FQA13N80

July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to Fast switching

4.4. fqa13n50c f109.pdf Size:862K _fairchild_semi

FQA13N80
FQA13N80

December 2013 FQA13N50C_F109 N-Channel QFET® MOSFET 500 V, 13.5 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect • 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology • Low Gate Charge (Typ. 43 nC) has been especia

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