FQA16N25C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA16N25C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 17.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 130 nS
Cossⓘ - Capacitancia de salida: 170 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Encapsulados: TO-3P
Búsqueda de reemplazo de FQA16N25C MOSFET
- Selecciónⓘ de transistores por parámetros
FQA16N25C datasheet
fqa16n25c.pdf
QFET FQA16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.8A, 250V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 68 pF) This advanced technology has been especially tailored to F
fqa16n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16A, 500V, RDS(on) = 0.32 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been
fqa160n08.pdf
September 2000 TM QFET QFET QFET QFET FQA160N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 160A, 80V, RDS(on) = 0.007 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 530 pF) This advanced technology has
fqa160n08.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQA11N90, FQA11N90C, FQA12N60, FQA12P20, FQA13N50, FQA13N50C, FQA13N80, FQA14N30, 75N75, FQA16N50, FQA17N40, FQA17P10, FQA19N20L, FQA20N40, FQA22P10, FQA24N50F109, FQA24N50F
History: BLM16N10-P | FQA34N20L
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818
