FQA17N40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQA17N40
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 17.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 185 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Encapsulados: TO-3PN
Búsqueda de reemplazo de FQA17N40 MOSFET
- Selecciónⓘ de transistores por parámetros
FQA17N40 datasheet
fqa17n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 17.2A, 400V, RDS(on) = 0.27 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee
fqa170n06.pdf
May 2001 TM QFET FQA170N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 170A, 60V, RDS(on) = 0.0056 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 220 nC) planar stripe, DMOS technology. Low Crss ( typical 620 pF) This advanced technology has been especially tailore
fqa17p10.pdf
TM QFET FQA17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -18A, -100V, RDS(on) = 0.19 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to
fqa170n06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQA12N60, FQA12P20, FQA13N50, FQA13N50C, FQA13N80, FQA14N30, FQA16N25C, FQA16N50, IRFB31N20D, FQA17P10, FQA19N20L, FQA20N40, FQA22P10, FQA24N50F109, FQA24N50F, FQA28N15F109, FQA28N50F109
History: ZXMD63N03X | BUK9660-100A | STP110N10F7
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933
