FQB10N20LTM Todos los transistores

 

FQB10N20LTM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB10N20LTM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: D2-PAK

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FQB10N20LTM Datasheet (PDF)

 ..1. Size:575K  fairchild semi
fqb10n20ltm.pdf

FQB10N20LTM
FQB10N20LTM

December 2000TMQFETQFETQFETQFETFQB10N20L / FQI10N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 14 pF)This advanced

 6.1. Size:606K  fairchild semi
fqb10n20c.pdf

FQB10N20LTM
FQB10N20LTM

TMQFETFQB10N20C/FQI10N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 40.5 pF)This advanced technology has been especially tailore

 8.1. Size:614K  fairchild semi
fqb10n60ctm fqi10n60ctu.pdf

FQB10N20LTM
FQB10N20LTM

TMQFETFQB10N60C / FQI10N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especially tailore

 8.2. Size:594K  fairchild semi
fqb10n50cftm.pdf

FQB10N20LTM
FQB10N20LTM

October 2013FQB10N50CFN-Channel QFET FRFET MOSFET500 V, 10 A, 610 mFeatures Description 10 A, 500 V, RDS(on) = 610 m (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro-duced using Fairchild Semiconductors proprietary planar stripe Low gate charge ( Typ. 45 nC)and DMOS technology. This advanced MOSFET technology has been esp

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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