FQB17N08TM Todos los transistores

 

FQB17N08TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB17N08TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 16.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: D2-PAK
 

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FQB17N08TM Datasheet (PDF)

 ..1. Size:614K  fairchild semi
 fqb17n08tm fqi17n08tu.pdf pdf_icon

FQB17N08TM

January 2001TMQFETQFETQFETQFETFQB17N08 / FQI17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technolo

 6.1. Size:569K  fairchild semi
 fqb17n08ltm fqi17n08ltu.pdf pdf_icon

FQB17N08TM

December 2000TMQFETQFETQFETQFETFQB17N08L / FQI17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.1. Size:710K  fairchild semi
 fqb17p10tm.pdf pdf_icon

FQB17N08TM

TMQFETFQB17P10 / FQI17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tail

 9.2. Size:691K  fairchild semi
 fqb17p06tm fqi17p06tu.pdf pdf_icon

FQB17N08TM

May 2001TMQFETFQB17P06 / FQI17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially

MOSTRAR MÁS

Otros transistores... FQB13N50CTM , FQB14N15 , FQB14N30TM , FQB15P12TM , FQB16N15TM , FQB16N25CTM , FQB16N25TM , FQB17N08LTM , K2611 , FQB17P06TM , FQB17P10TM , FQB19N10LTM , FQB19N10TM , FQB19N20CTM , FQB19N20LTM , FQB19N20TM , FQB1N60TM .

History: CHM453NZGP | IPD60R1K5CE | NTMFS4C054N | QM2404C1 | TPC8223-H | CHM4435AZGP | AOWF11N70

 

 
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