FQB17N08TM Todos los transistores

 

FQB17N08TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB17N08TM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 65 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 16.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 60 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.115 Ohm
   Paquete / Cubierta: D2-PAK

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FQB17N08TM Datasheet (PDF)

 ..1. Size:614K  fairchild semi
fqb17n08tm fqi17n08tu.pdf

FQB17N08TM
FQB17N08TM

January 2001TMQFETQFETQFETQFETFQB17N08 / FQI17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technolo

 6.1. Size:569K  fairchild semi
fqb17n08ltm fqi17n08ltu.pdf

FQB17N08TM
FQB17N08TM

December 2000TMQFETQFETQFETQFETFQB17N08L / FQI17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced

 9.1. Size:710K  fairchild semi
fqb17p10tm.pdf

FQB17N08TM
FQB17N08TM

TMQFETFQB17P10 / FQI17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tail

 9.2. Size:691K  fairchild semi
fqb17p06tm fqi17p06tu.pdf

FQB17N08TM
FQB17N08TM

May 2001TMQFETFQB17P06 / FQI17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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