FQB17P10TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB17P10TM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16.5 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 200 nS
Conductancia de drenaje-sustrato (Cd): 310 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: D2-PAK
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FQB17P10TM Datasheet (PDF)
fqb17p10tm.pdf
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