FQB19N20LTM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB19N20LTM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 300 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: D2-PAK

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FQB19N20LTM datasheet

 ..1. Size:839K  fairchild semi
 fqb19n20ltm fqb19n20l fqi19n20l.pdf pdf_icon

FQB19N20LTM

October 2008 QFET FQB19N20L / FQI19N20L 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been

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 fqb19n20l.pdf pdf_icon

FQB19N20LTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:831K  fairchild semi
 fqb19n20tm fqb19n20 fqi19n20 fqi19n20tu.pdf pdf_icon

FQB19N20LTM

October 2008 QFET FQB19N20 / FQI19N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been espec

 6.2. Size:1167K  fairchild semi
 fqb19n20ctm fqb19n20c fqi19n20c fqi19n20ctu.pdf pdf_icon

FQB19N20LTM

October 2008 QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been espec

MOSTRAR MÁS

Otros transistores... FQB16N25TM, FQB17N08LTM, FQB17N08TM, FQB17P06TM, FQB17P10TM, FQB19N10LTM, FQB19N10TM, FQB19N20CTM, IRF1405, FQB19N20TM, FQB1N60TM, FQB1P50TM, FQB20N06LTM, FQB20N06TM, FQB22P10TM, FQB24N08TM, FQB25N33TM