FQB5N90TM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQB5N90TM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 158 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 65 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Encapsulados: D2-PAK
Búsqueda de reemplazo de FQB5N90TM MOSFET
- Selecciónⓘ de transistores por parámetros
FQB5N90TM datasheet
..1. Size:1029K fairchild semi
fqb5n90tm.pdf 
October 2008 QFET FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall
7.1. Size:1072K fairchild semi
fqb5n90 fqi5n90.pdf
October 2008 QFET FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 900V, RDS(on) = 2.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especiall
9.1. Size:655K fairchild semi
fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf
TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored
9.2. Size:553K fairchild semi
fqb5n60 fqi5n60.pdf
April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h
9.3. Size:945K fairchild semi
fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf
October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tai
9.4. Size:551K fairchild semi
fqb5n60tm.pdf
April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology h
9.5. Size:539K fairchild semi
fqb5n20l fqi5n20l.pdf
December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced
9.6. Size:700K fairchild semi
fqb5n50cf fqb5n50cftm.pdf
May 2006 TM FRFET FQB5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini
9.7. Size:700K fairchild semi
fqb5n20tm fqi5n20tu.pdf
April 2000 TM QFET QFET QFET QFET FQB5N20 / FQI5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology
9.8. Size:765K fairchild semi
fqb5n30tm fqi5n30tu.pdf
May 2000 TM QFET QFET QFET QFET FQB5N30 / FQI5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology h
9.9. Size:760K fairchild semi
fqb5n15tm fqi5n15tu.pdf
May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.4A, 150V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.4 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology h
9.10. Size:711K fairchild semi
fqb5n40tm fqi5n40tu.pdf
April 2000 TM QFET QFET QFET QFET FQB5N40 / FQI5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology
9.11. Size:538K fairchild semi
fqb5n20ltm fqi5n20ltu.pdf
December 2000 TM QFET QFET QFET QFET FQB5N20L / FQI5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced
9.12. Size:768K fairchild semi
fqb5n50tm.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology
9.13. Size:578K onsemi
fqb5n60ctm ws.pdf
June 2015 FQB5N60CTM_WS N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, RDS(on) = 2.5 (Max.) @VGS = 10 V, ID = 2.1 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar Low Gate Charge (Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology
Otros transistores... FQB5N20TM, FQB5N30TM, FQB5N40TM, FQB5N50CFTM, FQB5N50CTM, FQB5N50TM, FQB5N60CTM, FQB5N60TM, 4435, FQB5P10TM, FQB5P20TM, FQB630TM, FQB65N06TM, FQB6N15TM, FQB6N25TM, FQB6N40CTM, FQB6N50
